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| SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 4 - MARCH 2001 PARTMARKING DETAILS - BCX19 BCX19R BCX17 U1 U4 BCX19 COMPLEMENTARY TYPES - C B E SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Peak Base Current Power Dissipation at T amb=25C Operating and Storage Temperature Range SYMBOL V CES V CEO V EBO I CM IC IB I BM P TOT T j :T stg VALUE 50 45 5 1000 500 100 200 330 -55 to +150 UNIT V V V mA mA mA mA mW C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Collector-Base Cut-Off Current Emitter-Base Cut-Off Current Base-Emitter Voltage Collector-Emitter Saturation Voltage Static Forward Current Transfer Ratio SYMBOL I CBO MIN. TYP. MAX. UNIT 100 200 10 nA A CONDITIONS. V CB =20V V CB =20V, T j=150C V EB =5V I EBO A V BE V CE(sat) 1.2 620 V mV I C =500mA, V CE =1V* I C =500mA, I B =50mA* h FE 100 70 40 200 600 I C =100mA, V CE =1V I C =300mA, V CE =1V* I C =500mA, V CE =1V* MHz I C =10mA, V CE =5V f =35MHz V CB =10V, f =1MHz Transition Frequency fT Output Capacitance C obo 5.0 pF *Measured under pulsed conditions. TBA |
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